STFI20NM65N MOSFET Transistor

The STFI20NM65N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STFI20NM65N transistor as follows.

STFI20NM65N Transistor Specification

Transistor Code		STFI20NM65N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAKFP
Transistor SMD Code		20NM65N
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	15A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.27Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		44nC

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