STF80N10F7 MOSFET Transistor

The STF80N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STF80N10F7 transistor as follows.

STF80N10F7 Transistor Specification

Transistor Code		STF80N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220FP
Transistor SMD Code		80N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		45nC

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