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STF10NM60N MOSFET Transistor

The STF10NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STF10NM60N transistor as follows.

Circuit diagram symbol of the STF10NM60N transistor

STF10NM60N Transistor Specification

Transistor Code STF10NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220FP
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.55Ohm
Power Dissipation (Maximum) PD 25W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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