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STE36N50-DA MOSFET Transistor

The STE36N50-DA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE36N50-DA transistor as follows.

Circuit diagram symbol of the STE36N50-DA transistor

STE36N50-DA Transistor Specification

Transistor Code STE36N50-DA
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOTOP
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 36A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 410W
Drain-Source Capacitance 8000pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 295nC

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