STE26N50 MOSFET Transistor

The STE26N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE26N50 transistor as follows.

STE26N50 Transistor Specification

Transistor Code		STE26N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOTOP
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	26A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		6000pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		275nC

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