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STE22N80 MOSFET Transistor

The STE22N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE22N80 transistor as follows.

Circuit diagram symbol of the STE22N80 transistor

STE22N80 Transistor Specification

Transistor Code STE22N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOTOP
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 22A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.4Ohm
Power Dissipation (Maximum) PD 400W
Drain-Source Capacitance 8100pF
Operating Junction Temperature (Maximum) 150°C

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