STE180N10 MOSFET Transistor

The STE180N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE180N10 transistor as follows.

STE180N10 Transistor Specification

Transistor Code		STE180N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOTOP
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	450W
Drain-Source Capacitance		18000pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		585nC

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