STE16N100 MOSFET Transistor

The STE16N100 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE16N100 transistor as follows.

STE16N100 Transistor Specification

Transistor Code		STE16N100
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOTOP
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	400W
Drain-Source Capacitance		7000pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		375nC

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