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STE150N10 MOSFET Transistor

The STE150N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STE150N10 transistor as follows.

Circuit diagram symbol of the STE150N10 transistor

STE150N10 Transistor Specification

Transistor Code STE150N10
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOTOP
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 150A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 410W
Drain-Source Capacitance 135pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 320nC

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