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STD9N60M2 MOSFET Transistor

The STD9N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD9N60M2 transistor as follows.

Circuit diagram symbol of the STD9N60M2 transistor

STD9N60M2 Transistor Specification

Transistor Code STD9N60M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 9N60M2
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.78Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 18pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 10nC

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