STD9HN65M2 MOSFET Transistor

The STD9HN65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD9HN65M2 transistor as follows.

STD9HN65M2 Transistor Specification

Transistor Code		STD9HN65M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		9HN65M2
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.82Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		16pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4.6nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11.5nC

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