STD8N10LT4 MOSFET Transistor

The STD8N10LT4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD8N10LT4 transistor as follows.

STD8N10LT4 Transistor Specification

Transistor Code		STD8N10LT4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		12nC

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