STD80N6F6 MOSFET Transistor

The STD80N6F6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD80N6F6 transistor as follows.

STD80N6F6 Transistor Specification

Transistor Code		STD80N6F6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		80N6F6
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.005Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		71nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		147nC

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