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STD7NM60N MOSFET Transistor

The STD7NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD7NM60N transistor as follows.

Circuit diagram symbol of the STD7NM60N transistor

STD7NM60N Transistor Specification

Transistor Code STD7NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.9Ohm
Power Dissipation (Maximum) PD 45W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V

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