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STD6N60M2 MOSFET Transistor

The STD6N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD6N60M2 transistor as follows.

Circuit diagram symbol of the STD6N60M2 transistor

STD6N60M2 Transistor Specification

Transistor Code STD6N60M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 6N60M2
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 14pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.4nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 8nC

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