STD5406N MOSFET Transistor

The STD5406N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD5406N transistor as follows.

STD5406N Transistor Specification

Transistor Code		STD5406N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		5406N
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		45nC

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