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STD3NM60N MOSFET Transistor

The STD3NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD3NM60N transistor as follows.

Circuit diagram symbol of the STD3NM60N transistor

STD3NM60N Transistor Specification

Transistor Code STD3NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 3NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 3.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 12.8pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 9.5nC

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