STD3NM60N MOSFET Transistor

The STD3NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD3NM60N transistor as follows.

STD3NM60N Transistor Specification

Transistor Code		STD3NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		3NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	3.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		12.8pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		9.5nC

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