STD30NE06LT4 MOSFET Transistor

The STD30NE06LT4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD30NE06LT4 transistor as follows.

STD30NE06LT4 Transistor Specification

Transistor Code		STD30NE06LT4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		350pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		31nC

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