STD30N10F7 MOSFET Transistor

The STD30N10F7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD30N10F7 transistor as follows.

STD30N10F7 Transistor Specification

Transistor Code		STD30N10F7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		30N10F7
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		17.5nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		19nC

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