STD2NM60T4 MOSFET Transistor

The STD2NM60T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD2NM60T4 transistor as follows.

STD2NM60T4 Transistor Specification

Transistor Code		STD2NM60T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.2Ohm
Power Dissipation (Maximum)	PD	46W
Drain-Source Capacitance		67pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6nC

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