STD1NA60T4 MOSFET Transistor

The STD1NA60T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD1NA60T4 transistor as follows.

STD1NA60T4 Transistor Specification

Transistor Code		STD1NA60T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C

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