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STD18N65M5 MOSFET Transistor

The STD18N65M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD18N65M5 transistor as follows.

Circuit diagram symbol of the STD18N65M5 transistor

STD18N65M5 Transistor Specification

Transistor Code STD18N65M5
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 18N65M5
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.22Ohm
Power Dissipation (Maximum) PD 110W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 31nC

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