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STD18N55M5 MOSFET Transistor

The STD18N55M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD18N55M5 transistor as follows.

Circuit diagram symbol of the STD18N55M5 transistor

STD18N55M5 Transistor Specification

Transistor Code STD18N55M5
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 550V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.24Ohm
Power Dissipation (Maximum) PD 90W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 31nC

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