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STD12NM50N MOSFET Transistor

The STD12NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD12NM50N transistor as follows.

Circuit diagram symbol of the STD12NM50N transistor

STD12NM50N Transistor Specification

Transistor Code STD12NM50N
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code D12NM50N
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 30nC

STD12NM50N MOSFET Transistor Overview

The STD12NM50N is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DPAK package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the STD12NM50N MOSFET

Followings are the key electrical characteristics of the STD12NM50N MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in STD12NM50N MOSFET transistor is 500V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the STD12NM50N MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the STD12NM50N MOSFET transistor is 11A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of STD12NM50N MOSFET transistor when the transistor is fully turned on is 0.38 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the STD12NM50N MOSFET transistor can comfortably transfer into heat without breaking is 100W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the STD12NM50N MOSFET transistor is 100pF. This value influences to the switching speed of the STD12NM50N MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the STD12NM50N MOSFET transistor is switched on is 15nS. This is the rate at which STD12NM50N MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the STD12NM50N MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of STD12NM50N MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the STD12NM50N MOSFET transistor. You can download the official STD12NM50N MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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