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STD12N50M2 MOSFET Transistor

The STD12N50M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD12N50M2 transistor as follows.

Circuit diagram symbol of the STD12N50M2 transistor

STD12N50M2 Transistor Specification

Transistor Code STD12N50M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 12N50M2
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.38Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 33pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 15nC

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