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STD11N65M2 MOSFET Transistor

The STD11N65M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD11N65M2 transistor as follows.

Circuit diagram symbol of the STD11N65M2 transistor

STD11N65M2 Transistor Specification

Transistor Code STD11N65M2
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Transistor SMD Code 11N65M2
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.67Ohm
Power Dissipation (Maximum) PD 85W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 7.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 12.5nC

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