STD110N02RT4G MOSFET Transistor

The STD110N02RT4G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD110N02RT4G transistor as follows.

STD110N02RT4G Transistor Specification

Transistor Code		STD110N02RT4G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Transistor SMD Code		T110N2
Drain-Source Voltage (Maximum)	VDS	24V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	110A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		1105pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		39nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		23.6nC

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