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STD10PF06-1 MOSFET Transistor

The STD10PF06-1 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD10PF06-1 transistor as follows.

Circuit diagram symbol of the STD10PF06-1 transistor

STD10PF06-1 Transistor Specification

Transistor Code STD10PF06-1
Transistor Type MOSFET
Control Channel Type P-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 40W
Drain-Source Capacitance 230pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 40nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 16nC

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