STD10N10T4 MOSFET Transistor

The STD10N10T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STD10N10T4 transistor as follows.

STD10N10T4 Transistor Specification

Transistor Code		STD10N10T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		750pF
Operating Junction Temperature (Maximum)		175°C

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