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STB8NM60N MOSFET Transistor

The STB8NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB8NM60N transistor as follows.

Circuit diagram symbol of the STB8NM60N transistor

STB8NM60N Transistor Specification

Transistor Code STB8NM60N
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Transistor SMD Code B8NM60N
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 70W
Drain-Source Capacitance 37pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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