STB8NM60 MOSFET Transistor

The STB8NM60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB8NM60 transistor as follows.

STB8NM60 Transistor Specification

Transistor Code		STB8NM60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	100W

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