STB80PF55T4 MOSFET Transistor

The STB80PF55T4 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB80PF55T4 transistor as follows.

STB80PF55T4 Transistor Specification

Transistor Code		STB80PF55T4
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2PAK
Transistor SMD Code		B80PF55
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1130pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		190nC

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