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STB80NF06 MOSFET Transistor

The STB80NF06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB80NF06 transistor as follows.

Circuit diagram symbol of the STB80NF06 transistor

STB80NF06 Transistor Specification

Transistor Code STB80NF06
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code P80NF06
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 800pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 115nC

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