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STB80L60 MOSFET Transistor

The STB80L60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB80L60 transistor as follows.

Circuit diagram symbol of the STB80L60 transistor

STB80L60 Transistor Specification

Transistor Code STB80L60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO263
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 80A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0097Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 370pF
Total Gate Charge 235nC

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