STB6NM60N MOSFET Transistor

The STB6NM60N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB6NM60N transistor as follows.

STB6NM60N Transistor Specification

Transistor Code		STB6NM60N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B6NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	4.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.92Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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