STB6N80K5 MOSFET Transistor

The STB6N80K5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB6N80K5 transistor as follows.

STB6N80K5 Transistor Specification

Transistor Code		STB6N80K5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		6N80K5
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.6Ohm
Power Dissipation (Maximum)	PD	85W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		13nC

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