STB60NF10T4 MOSFET Transistor

The STB60NF10T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB60NF10T4 transistor as follows.

STB60NF10T4 Transistor Specification

Transistor Code		STB60NF10T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B60NF10
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		470pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		104nC

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