STB55NF06T4 MOSFET Transistor

The STB55NF06T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB55NF06T4 transistor as follows.

STB55NF06T4 Transistor Specification

Transistor Code		STB55NF06T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B55NF06
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		44.5nC

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