STB4N62K3 MOSFET Transistor

The STB4N62K3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB4N62K3 transistor as follows.

STB4N62K3 Transistor Specification

Transistor Code		STB4N62K3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	620V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	70W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		22nC

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