STB26NM60ND MOSFET Transistor

The STB26NM60ND is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB26NM60ND transistor as follows.

STB26NM60ND Transistor Specification

Transistor Code		STB26NM60ND
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		26NM60ND
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14.5nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		54.6nC

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