STB24N60DM2 MOSFET Transistor

The STB24N60DM2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB24N60DM2 transistor as follows.

STB24N60DM2 Transistor Specification

Transistor Code		STB24N60DM2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		24N60DM2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		56pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.7nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		29nC

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