STB21NM50N MOSFET Transistor

The STB21NM50N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB21NM50N transistor as follows.

STB21NM50N Transistor Specification

Transistor Code		STB21NM50N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B21NM50N
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		65nC

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