STB200NF04L MOSFET Transistor

The STB200NF04L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB200NF04L transistor as follows.

STB200NF04L Transistor Specification

Transistor Code		STB200NF04L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B200NF04L
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0035Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		270nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		72nC

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