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STB19NB20-1 MOSFET Transistor

The STB19NB20-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB19NB20-1 transistor as follows.

Circuit diagram symbol of the STB19NB20-1 transistor

STB19NB20-1 Transistor Specification

Transistor Code STB19NB20-1
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 19A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 125W
Drain-Source Capacitance 285pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 29nC

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