STB190NF04T4 MOSFET Transistor

The STB190NF04T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB190NF04T4 transistor as follows.

STB190NF04T4 Transistor Specification

Transistor Code		STB190NF04T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B190NF04
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		1500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		380nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		130nC

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