STB18N60M2 MOSFET Transistor

The STB18N60M2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB18N60M2 transistor as follows.

STB18N60M2 Transistor Specification

Transistor Code		STB18N60M2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		18N60M2
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21.5nC

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