STB150NF55T4 MOSFET Transistor

The STB150NF55T4 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB150NF55T4 transistor as follows.

STB150NF55T4 Transistor Specification

Transistor Code		STB150NF55T4
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		B150NF55
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.006Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		1050pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		140nC

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