STB14NM65N MOSFET Transistor

The STB14NM65N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB14NM65N transistor as follows.

STB14NM65N Transistor Specification

Transistor Code		STB14NM65N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		14NM65N
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		45nC

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