STB11NM60N-1 MOSFET Transistor

The STB11NM60N-1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB11NM60N-1 transistor as follows.

STB11NM60N-1 Transistor Specification

Transistor Code		STB11NM60N-1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK
Transistor SMD Code		B11NM60N
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		44pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18.5nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		31nC

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