STB11N65M5 MOSFET Transistor

The STB11N65M5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STB11N65M5 transistor as follows.

STB11N65M5 Transistor Specification

Transistor Code		STB11N65M5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Transistor SMD Code		11N65M5
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	85W
Drain-Source Capacitance		18pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		17nC

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